作者：admin 发布时间：1970-01-01 08:33 浏览次数 :
| Symbol | Value | Unit |
| IT(RMS) | 1.25 | A |
| IGT | ≤200 | μA |
| VDSM /VRSM | 1250 | V |
| Parameter | Symbol | Value | Unit | |
| Storage junction temperature range | Tstg | -40-150 | ℃ | |
| Operating junction temperature range | Tj | -40-110 | ℃ | |
| Non repetitive peak off-state voltage | VDSM | 1250 | V | |
| Non repetitive peak reverse voltage | VRSM | 1250 | V | |
|
RMS on-state current |
TO-92CR (TC=50℃) |
IT(RMS) |
1.25 |
A |
|
SOT-223-2L / SOT-223 (TC=75℃) |
||||
|
Non repetitive surge peak on-state current (tp=10ms) |
ITSM | 20 | A | |
| I2t value for fusing (tp=10ms) | I2t | 2 | A2s | |
| Critical rate of rise of on-state current | dI/dt | 50 | A/μs | |
| Peak gate current (tp=20μs, Tj=110℃) | IGM | 0.2 | A | |
| Peak gate power (tp=20μs, Tj=110℃) | PGM | 0.5 | W | |
| Average gate power dissipation(Tj=110℃) | PG(AV) | 0.1 | W | |
