作者：admin 发布时间：1970-01-01 08:33 浏览次数 :
| Symbol | Value | Unit |
| IT(RMS) | 2 | A |
| IGT | ≤200 | μA |
| VTM | ≤1.5 | V |
| Parameter | Symbol | Value | Unit | |
| Storage junction temperature range | Tstg | -40-150 | ℃ | |
| Operating junction temperature range | Tj | -40-110 | ℃ | |
| Repetitive peak off-state voltage | VDRM | 600 | V | |
| Repetitive peak reverse voltage | VRRM | 600 | V | |
|
RMS on-state current |
TO-92 (TC=60℃) |
IT(RMS) |
2 |
A |
|
TO-251-4R/ TO-252-4R/ TO-126 (TC=72℃) |
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|
SOT-89/SOT-223/ SOT-89-2L (TC=65℃) |
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|
Non repetitive surge peak on-state current (tp=10ms) |
ITSM | 20 | A | |
| I2t value for fusing (tp=10ms) | I2t | 2 | A2s | |
| Critical rate of rise of on-state current | dI/dt | 50 | A/μs | |
| Peak gate current (tp=20μs, Tj=110℃) | IGM | 0.2 | A | |
| Peak gate power (tp=20μs, Tj=110℃) | PGM | 0.5 | W | |
