发布日期：1970-01-01 08:33 浏览次数：
| Symbol | Value | Unit |
| IT(RMS) | 1 | A |
| VDRM /VRRM | 1000 | V |
| IGT | ≤5 or ≤10 | mA |
| Parameter | Symbol | Value | Unit | |
| Storage junction temperature range | Tstg | -40-150 | ℃ | |
| Operating junction temperature range | Tj | -40-125 | ℃ | |
| Repetitive peak off-state voltage( Tj=25℃) | VDRM | 1000 | V | |
| Repetitive peak reverse voltage( Tj=25℃) | VRRM | 1000 | V | |
| Non repetitive surge peak Off-state voltage | VDSM | VDRM +100 | V | |
| Non repetitive peak reverse voltage | VRSM | VRRM +100 | V | |
|
RMS on-state current |
SOT-223-2L/ SOT-223(TC=70℃) |
IT(RMS) |
1 |
A |
| TO-92 (TC=57℃) | ||||
|
Non repetitive surge peak on-state current ( full cycle, F=50Hz) |
ITSM | 10 | A | |
| I2t value for fusing ( tp=10ms) | I2t | 1.12 | A2s | |
| Rate of rise of on-state current (IG=2×IGT) | dIT/dt | 50 | A/μs | |
| Peak gate current | IGM | 1 | A | |
| Average gate power dissipation | PG(AV) | 0.2 | W | |
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